Wire flash
Galaxy Microelectronics Plans 1.078 Billion Yuan Investment in High-End Power Device Project
Editorial responsibility
- No named human review is recorded for this page.
- Source reporting is collected, normalized, translated or condensed automatically when needed.
- Automatically published source-backed update
Galaxy Microelectronics (688689.SH) announced on September 21 that it plans to invest 1.078 billion yuan in a project titled 'High-End Core Device Industrialization and Innovation Capability Construction.' The project is a continuation of the previously disclosed 'High-End Integrated Circuit Discrete Device Industrialization Base Phase I Plant Construction Project.' It involves renovation, equipment procurement and installation, production line commissioning, and customer verification based on the Phase I plant. The products covered by this project include power discrete devices and third-generation semiconductor devices using advanced chip structures such as SGT/SJ, IGBT, and SiC/GaN. These products are designed to meet high-reliability certifications like AEC-Q101 and target high-barrier applications including new energy vehicles, energy storage, and industrial sectors. They feature low power loss, high ESD/avalanche resistance, and long lifespan. Specific products include SGT MOSFETs, super-junction MOSFETs, IGBTs and modules, SiC devices, IPM modules, and automotive-grade TVS/ESD devices, distinguishing them from traditional consumer-grade small-signal diodes and ordinary low-voltage planar devices.
Source report
September 21 — Galaxy Microelectronics (688689.SH) announced that the company plans to invest a total of 1.078 billion yuan in its "High-End Core Device Industrialization and Innovation Capability Construction Project," using自有 or self-raised funds.
The project is a continuation of the previously disclosed "Phase I Plant Construction Project for the High-End Integrated Circuit Discrete Device Industrialization Base." It primarily involves renovation and retrofitting of the Phase I plant, equipment procurement and installation, production line commissioning, and customer validation.
Products covered under this project include power discrete devices and third-generation semiconductor devices that:
- Utilize advanced chip structures such as SGT/SJ, IGBT, and SiC/GaN
- Meet high-reliability certifications including AEC-Q101
- Target high-barrier application scenarios such as new energy vehicles, energy storage, and industrial sectors
- Feature low power loss, high ESD/avalanche resistance, and long operational life
Key product categories include:
- SGT MOSFETs
- Super Junction MOSFETs
- IGBTs and modules
- SiC devices
- IPM modules
- Automotive-grade TVS/ESD devices
These products are distinct from traditional consumer-grade small-signal diodes and conventional low-voltage planar devices.
Source
财联社Eastern
Part of this Story
Galaxy Microelectronics to Invest 1.078 Billion Yuan in High-End Semiconductor Device Project