CXMT begins mass production of fifth-generation DRAM platform, boosting die output by at least 50%
On September 20, 2026, at the World Manufacturing Conference in Hefei, Chinese memory chipmaker CXMT announced mass production of its fifth-generation DRAM platform (G5). The platform uses quadruple-patterning lithography to achieve an 11.95nm active area half-pitch, approaching leading global nodes. It increases dies per wafer by at least 50% over the prior generation. CXMT also showcased mass-produced 24Gb LPDDR5X chips for smartphones and consumer electronics.
Editorial responsibility
- No named human review is recorded for this page.
- Reports are grouped by semantic similarity and deterministic rules. Language models may assist titles, summaries, translation and cross-source analysis; the page reads the event directly, while its address stays stable when the title changes.
- Summary covers the current reports
Cross-source coverage
Reporting timeline
CXMT Begins Mass Production of Fifth-Generation DRAM Platform, Achieves Miniaturization Breakthrough
On September 20, CXMT (ChangXin Memory Technologies) announced at the World Manufacturing Conference that its fifth-generation DRAM technology platform (G5 Platform) has entered mass production. The G5 Platform's process technology matches the industry's leading mass-production nodes, marking a milestone in advanced memory technology. Key technical achievements include quadruple-patterning lithography shrinking the active area half-pitch to 11.95 nanometers, a storage capacitor aspect ratio of 45:1, and a high-k metal gate (HKMG) process reducing the core functional area height to 6762 nanometers. The breakthrough in scaling technology has boosted storage density, with die output per wafer at least 50% higher than the fourth-generation platform, offering advantages in energy efficiency and cost control. CXMT also showcased two mass-produced LPDDR5X products based on the G5 Platform, each with 24Gb capacity (a 50% increase over previous-generation products), available in 496-ball and 245-ball package specifications for mid-to-high-end smartphones and portable consumer electronics. Both products have entered large-scale mass production.
Read sourceCXMT Announces Mass Production of Fifth-Generation Memory Technology Platform at 2026 Conference
On September 20, 2026, at the World Manufacturing Conference, Chinese memory manufacturer CXMT announced the official mass production of its fifth-generation technology platform. The company reported achieving an active area half-pitch of 11.95 nanometers for memory arrays, a storage capacitor aspect ratio of 45:1, and a reduced core kinetic region height of 6,762 nanometers. The storage density of the fifth-generation process platform has significantly improved, with wafer output per unit increasing by more than 50% compared to the previous generation under equivalent conditions. Based on this platform, CXMT's 24GB LPDDR5X products have entered formal mass production and are now fully integrated into mainstream domestic flagship smartphones.
Read sourceChangXin Memory Technologies Announces Mass Production of Fifth-Generation Chip Platform
On September 20, at the 2026 World Manufacturing Conference, ChangXin Memory Technologies (CXMT) announced the official mass production of its fifth-generation technology platform. The platform features a half-pitch of 11.95 nanometers for the active area of memory arrays and a capacitor aspect ratio of 45:1, while reducing the core kinetic region height to 6762 nanometers. Storage density has been significantly improved, with wafer output per unit increasing by more than 50% compared to the previous generation under equivalent conditions. The 24GB LPDDR5X products built on this platform have entered formal mass production and are now fully integrated into mainstream domestic flagship smartphones, according to a report from The Paper.
Show 8 older updatesHide older updates
ChangXin Memory Technologies Begins Mass Production of Fifth-Generation Memory Platform
On September 20, 2026, at the World Manufacturing Conference, ChangXin Memory Technologies (CXMT) announced the official mass production of its fifth-generation technology platform. The company reported achieving an active area half-pitch of 11.95 nanometers for memory arrays and a capacitor aspect ratio of 45:1 for storage devices, while reducing the core kinetic region height to 6762 nanometers. CXMT stated that storage density has significantly improved, with wafer output increasing by more than 50% compared to the previous generation under equivalent conditions. The 24GB LPDDR5X products developed on this platform have entered formal mass production and are now fully integrated into mainstream domestic flagship smartphones, according to the company's announcement reported by Cailian Press and The Paper.
Read sourceCXMT Begins Mass Production of Fifth-Generation DRAM Technology Platform
On September 20, at the 2026 World Manufacturing Conference in Hefei, Anhui Province, ChangXin Memory Technologies (CXMT) announced that its fifth-generation DRAM technology platform (G5 platform) has officially entered mass production. The G5 platform uses innovative quadruple-patterning lithography to shrink the active-area half-pitch of memory arrays to 11.95 nanometers, achieve a storage capacitor aspect ratio of 45:1, and reduce the height of core functional areas to 6,762 nanometers. Two LPDDR5X mass-production products based on the G5 platform were showcased at the conference, each with a capacity of 24 GB per chip. These products are suitable for mid-to-high-end smartphones and portable consumer electronics and have both entered large-scale mass production.
Read sourceCXMT's Fifth-Generation Memory Platform Enters Mass Production, Showcases LPDDR5X Chips
On September 20, at the 2026 World Manufacturing Conference in Hefei, Anhui, CXMT (Changxin Technology) announced that its fifth-generation technology platform (G5) has officially entered mass production. The platform uses innovative quadruple-patterning technology to shrink the active area half-pitch of memory arrays to 11.95 nanometers, achieve a storage capacitor aspect ratio of 45:1, and reduce the height of core functional areas to 6,762 nanometers. The conference also showcased two mass-produced LPDDR5X products based on the G5 platform, each with a capacity of 24GB, designed for mid-to-high-end smartphones and portable consumer electronics. The report was sourced from Securities Times Network and published on East Money.
Read sourceCXMT Announces Mass Production of Fifth-Generation Memory Technology Platform
On September 20, at the 2026 World Manufacturing Conference, CXMT (Changxin Memory Technologies) announced the official mass production of its fifth-generation technology platform. The company has reduced the active-area half-pitch of its memory array to 11.95 nm and achieved a capacitor aspect ratio of 45:1 in its storage devices, while lowering the height of the core kinetic region to 6762 nm. The fifth-generation process platform significantly improves storage density, increasing wafer output per wafer by more than 50% compared with the previous-generation platform under equivalent conditions. The 24GB LPDDR5X products built on this platform have entered mass production and are now widely adopted in mainstream domestic flagship smartphones, according to reports from The Paper.
Read sourceCXMT's Fifth-Generation DRAM Platform Enters Mass Production, Approaching Advanced Nodes
On September 20, at the 2026 World Manufacturing Conference, Chinese memory chipmaker CXMT (ChangXin Memory Technologies) officially announced that its fifth-generation DRAM technology platform (G5) has entered mass production. The company also unveiled new high-capacity LPDDR5X products built on this platform. According to the announcement, the G5 platform achieved multiple industry-leading technological breakthroughs in key process dimensions. Using innovative quadruple-patterning lithography, CXMT scaled down the active area half-pitch of the memory array to 11.95 nanometers, approaching the process node of the world's most advanced memory mass-production platforms. The report is sourced from Yicai Global and published on East Money, a Chinese financial news outlet.
Read sourceCXMT's Fifth-Generation DRAM Platform Enters Mass Production, High-Capacity LPDDR5X Unveiled
On September 20, at the 2026 World Manufacturing Conference, Chinese memory chip maker CXMT (ChangXin Memory Technologies) announced that its fifth-generation DRAM technology platform (G5 Platform) has entered mass production. The platform's process level is said to rival the industry's top-tier mass-production nodes, marking a milestone in CXMT's advanced memory technology roadmap. Key breakthroughs include innovative quadruple-patterning lithography technology that shrinks the active area half-pitch to 11.95 nanometers, and new materials and process flows. The G5 Platform increases the number of dies per wafer by at least 50% compared to the fourth generation, offering advantages in energy efficiency and cost control. CXMT also showcased two mass-produced LPDDR5X products based on the G5 Platform, each with a single-chip capacity of 24Gb—a 50% increase over previous-generation products. These chips are suitable for mid-to-high-end smartphones and portable consumer electronics. CXMT stated it will continue technology iterations to provide higher-performance memory products for the global digital economy.
Read sourceCXMT Begins Mass Production of Fifth-Generation DRAM Technology Platform
On September 20, at the World Manufacturing Conference, CXMT (ChangXin Memory Technologies) officially announced that its fifth-generation DRAM technology platform has entered mass production. The company also unveiled new high-capacity LPDDR5X products developed on this platform. According to the announcement, the process technology level of this platform matches the industry's leading mass-production nodes, marking a milestone breakthrough in CXMT's advanced memory technology roadmap. The breakthrough in miniaturization processes has driven a leapfrog improvement in storage density, with the number of dies produced per wafer increasing by at least 50% compared with the fourth-generation platform. This offers advantages in both product energy efficiency and cost control. The report was sourced from Southern Finance and published by 21st Century Business Herald.
Read sourceCXMT's Fifth-Generation DRAM Platform Enters Mass Production, Boosts Storage Density
On September 20, Chinese memory chipmaker CXMT announced at the World Manufacturing Convention that its fifth-generation DRAM technology platform (G5 Platform) has entered mass production. The platform uses quadruple-patterning lithography to achieve an active area half-pitch of 11.95 nanometers, approaching the world's most advanced mass-produced memory nodes. CXMT stated that the G5 Platform's miniaturization breakthrough increases the number of dies per wafer by at least 50% compared to the fourth-generation platform, offering advantages in energy efficiency and cost control. The company also showcased two mass-produced LPDDR5X products based on the G5 Platform, each with a capacity of 24Gb—a 50% increase over previous-generation products. These products use 496-ball and 245-ball package specifications, targeting mid-to-high-end smartphones and portable consumer electronics. The announcement marks a milestone for CXMT in advanced memory technology, rivaling industry top-tier nodes.
Read source