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Chinese Academy of Sciences achieves breakthrough in sliding ferroelectric tunnel junctions
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A research team from the Institute of Semiconductors at the Chinese Academy of Sciences has overcome a key industry challenge in sliding ferroelectric tunnel junctions. By using interface engineering of two-dimensional van der Waals heterostructures, they achieved a balance between high on/off ratios and high endurance. The team found that an atomic-layer slip of just 0.1 nanometers can trigger a resistance change of tens of millions of times. The researchers stated that if large-scale device arrays and supporting circuits are further refined, such devices could enable faster, lower-power data storage and computing for terminal hardware like smartphones and computers. They noted that this technology offers a new technical solution to alleviate the conflict between increasing computational power demands and limited energy consumption, thereby promoting the implementation of novel computing architectures that integrate memory and processing. The findings were published in the international academic journal Science on September 11.
Source report
A research team from the Institute of Semiconductors, Chinese Academy of Sciences, has achieved a breakthrough in sliding ferroelectric tunnel junctions by engineering the interface of two-dimensional van der Waals heterostructures.
Key Findings
- A slip of just one atomic layer on the angstrom scale—equivalent to 0.1 nanometers—can trigger a resistance change of tens of millions of times.
- The team successfully addressed the industry challenge of balancing high on/off ratios with high endurance.
Potential Applications
According to the researchers, further refinement of large-scale device arrays and supporting circuits could enable:
- Faster, lower-power data storage and computing
- Integration into end-user hardware such as smartphones and computers
This technology offers a new solution to alleviate the growing conflict between increasing computational power demands and limited energy consumption, thereby facilitating the implementation of novel computing architectures that combine memory and processing.
Publication
The findings were published in the international academic journal Science on September 11. (Xinhua)
Source
thsEastern