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Hao Yue team publishes ferroelectric durability breakthrough in Science
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A research team led by Academician Hao Yue at Xidian University, in collaboration with scholars from City University of Hong Kong and Fudan University, has achieved a new breakthrough in understanding failure phenomena in ferroelectric materials. The findings, published on the 11th in the international academic journal Science, bridge atomic-scale defect behavior with device-level reliability performance. This provides a new physical foundation for developing high-reliability, high-density wurtzite-structure ferroelectric memories and establishes a controllable pathway for tuning ferroelectric materials, addressing key durability challenges.
Source report
According to a report from Xidian University, an academician team led by Hao Yue at the university, in collaboration with scholars from City University of Hong Kong and Fudan University, has achieved a new breakthrough in research on failure phenomena in ferroelectric materials. The findings provide a new pathway to address the durability challenges of these materials.
The related findings were published in the international academic journal Science on the 11th.
Key Contributions
- Bridges atomic-scale defect behavior with device-level reliability performance
- Offers a new physical foundation for the development of high-reliability, high-density wurtzite-structure ferroelectric memories
- Establishes a controllable pathway for tuning ferroelectric materials
Source
thsEastern