Samsung and Broadcom sign MOU to boost AI memory and foundry partnership

Published Jul 27, 10:29 AM UTC

Samsung Electronics and Broadcom have signed a memorandum of understanding (MOU) to deepen cooperation in memory and foundry technologies, with projects valued at over $200 billion through 2030. The agreement was announced at the AI Summit in San Francisco, attended by executives and South Korean government representatives. The collaboration aims to accelerate development of semiconductor solutions for next-generation AI infrastructure. In memory, the companies will work on high bandwidth memory (HBM) for Broadcom's AI accelerators. For foundry, they will focus on Samsung's 2nm and below process technologies for Broadcom's products, including Wireless Broadband Communications (WBC) solutions. The partnership may extend to advanced packaging techniques like 2.3D and 2.5D integration to enhance AI and networking chip performance. Samsung's capabilities across memory, foundry, logic, and advanced packaging are expected to support a broad range of AI and high-performance computing applications.