Advanced Metrology for Backside Metallization Using Picosecond Laser Ultrasonics
This technical article highlights Picosecond Ultrasonics (PULSE) Technology as a superior metrology solution for characterizing backside metallization (BSM) in advanced semiconductor manufacturing. As device architectures become more complex, precise measurement of BSM layers is critical for ensuring performance, reliability, and yield in power electronics, logic ICs, and memory devices. Traditional techniques like SEM, AFM, and XRR often face limitations regarding throughput, destructiveness, or sensitivity to surface roughness. In contrast, PULSE Technology offers a non-contact, non-destructive alternative capable of high-precision measurements across a wide thickness range, from 50 nm to 5 µm, with micron-scale spatial resolution. The technology enables simultaneous resolution of single-layer and multilayer metal stacks, even on rough or non-planar surfaces. With a small spot size allowing measurements on pads as small as 15 µm, it supports effective in-line monitoring. The article demonstrates the technology's excellent repeatability, long-term stability, and high throughput, enhanced by features like dual modulation and adaptive controls. This advancement addresses growing metrology challenges in the expanding BSM market, driven by demands from semiconductor, photovoltaic, MEMS, and LED sectors.
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Advanced Metrology for Backside Metallization Using Picosecond Laser Ultrasonics
This technical article highlights Picosecond Ultrasonics (PULSE) Technology as a superior metrology solution for characterizing backside metallization (BSM) in advanced semiconductor manufacturing. As device architectures become more complex, precise measurement of BSM layers is critical for ensuring performance, reliability, and yield in power electronics, logic ICs, and memory devices. Traditional techniques like SEM, AFM, and XRR often face limitations regarding throughput, destructiveness, or sensitivity to surface roughness. In contrast, PULSE Technology offers a non-contact, non-destructive alternative capable of high-precision measurements across a wide thickness range, from 50 nm to 5 µm, with micron-scale spatial resolution. The technology enables simultaneous resolution of single-layer and multilayer metal stacks, even on rough or non-planar surfaces. With a small spot size allowing measurements on pads as small as 15 µm, it supports effective in-line monitoring. The article demonstrates the technology's excellent repeatability, long-term stability, and high throughput, enhanced by features like dual modulation and adaptive controls. This advancement addresses growing metrology challenges in the expanding BSM market, driven by demands from semiconductor, photovoltaic, MEMS, and LED sectors.
Semiconductor Engineering